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SUP/SUB75P03-07
Vishay Siliconix
P-Channel 30-V (D-S) 175 C MOSFET
PRODUCT SUMMARY
VDS (V) - 30 rDS(on) () 0.007 at VGS = - 10 V 0.010 at VGS = - 4.5 V ID (A)a 75 75
Available
RoHS*
COMPLIANT
TO-220AB
TO-263
S G DRAIN connected to TAB DS
Top View SUB75P03-07
G
GDS Top View SUP75P03-07 Ordering Information: SUB75P03-07 (TO-263) SUB75P03-07-E3 (TO-263, Lead (Pb)-free) SUP75P03-07 (TO-220AB) SUP75P03-07-E3 (TO-220AB, Lead (Pb)-free) D P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwise noted
Parameter Gate-Source Voltage Continuous Drain Current (TJ = 175 C) Pulsed Drain Current Avalanche Current Repetitive Avalanche Energy Power Dissipation
b
Symbol VGS TC = 25 C TC = 125 C ID IDM IAR L = 0.1 mH TC = 25 C (TO-220AB and TO-263) TA = 25 C (TO-263)c EAR PD TJ, Tstg
Limit 20 75a
Unit V
- 65 - 240 - 60 180 187d 3.75 - 55 to 175
A
mJ W C
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Parameter Junction-to-Ambient Junction-to-Case Notes: a. Package limited. b. Duty cycle 1 %. c. When Mounted on 1" square PCB (FR-4 material). d. See SOA curve for voltage derating. * Pb containing terminations are not RoHS compliant, exemptions may apply. Document Number: 71109 S-72688-Rev. D, 24-Dec-07 www.vishay.com 1 PCB Mount (TO-263) Free Air (TO-220AB)
c
Symbol RthJA RthJC
Limit 40 62.5 0.8
Unit C/W
SUP/SUB75P03-07
Vishay Siliconix
SPECIFICATIONS TJ = 25 C, unless otherwise noted
Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta V(BR)DSS VGS(th) IGSS IDSS ID(on) VGS = 0 V, ID = - 250 A VDS = VGS, ID = - 250 A VDS = 0 V, VGS = 20 V VDS = - 30 V, VGS = 0 V VDS = - 30 V, VGS = 0 V, TJ = 125 C VDS = - 30 V, VGS = 0 V, TJ = 175 C VDS = - 5 V, VGS = - 10 V VGS = - 10 V, ID = - 30 A Drain-Source On-State Resistancea rDS(on) VGS = - 10 V, ID = - 30 A, TJ = 125 C VGS = - 10 V, ID = - 30 A, TJ = 175 C VGS = - 4.5 V, ID = - 20 A Forward Transconductance Dynamicb Input Capacitance Output Capacitance Reversen Transfer Capacitance Total Gate Chargec Gate-Source Charge Gate-Drain Chargec Turn-On Delay Timec Rise Timec Turn-Off Delay Timec Fall Timec
c a
Symbol
Test Conditions
Min - 30 -1
Typ
Max
Unit
-3 100 -1 - 50 - 250
V nA A A
- 120 0.0055 0.007 0.010 0.013 0.008 20 9000 0.010
gfs Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf
VDS = - 15 V, ID = - 75 A
S
VGS = 0 V, VDS = - 25 V, f = 1 MHz
1565 715 160 240
pF
VDS = - 15 V, VGS = - 10 V, ID = - 75 A
32 30 25 40 360 240 340
nC
VDD = - 15 V, RL = 0.2 ID - 75 A, VGEN = - 10 V, RG = 2.5 C)b
225 150 210
ns
Source-Drain Diode Ratings and Characteristics (TC = 25 Continuous Current Pulsed Current Forward Voltagea Reverse Recovery Time Peak Reverse Recovery Current Reverse Recovery Charge IS ISM VSD trr IRM(REC) Qrr
- 75 - 240 IF = - 75 A, VGS = 0 V IF = - 75 A, di/dt = 100 A/s - 1.2 55 2.5 0.07 - 1.5 100 5 0.25
A V ns A C
Notes: a. Pulse test; pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature.
Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
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Document Number: 71109 S-72688-Rev. D, 24-Dec-07
SUP/SUB75P03-07
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 C, unless otherwise noted
250 VGS = 10 thru 6 V 200 I D - Drain Current (A) 5V 150 I D - Drain Current (A) 160 200 TC = - 55 C 25 C
120
125 C
100 4V 50 3V 0 0 2 4 6 8 10
80
40
0 0 1 2 3 4 5 6
VDS - Drain-to-Source Voltage (V)
VGS - Gate-to-Source Voltage (V)
Output Characteristics
150 TC = - 55 C 0.025 g fs - Transconductance (S) 25 C 125 C 90 r DS(on) - On-Resistance () 120 0.030
Transfer Characteristics
0.020
0.015 VGS = 4.5 V 0.010 VGS = 10 V 0.005
60
30
0 0 20 40 60 80 100
0 0 20 40 60 80 100 120
ID - Drain Current (A)
ID - Drain Current (A)
Transconductance
12000 20
On-Resistance vs. Drain Current
Ciss
VGS - Gate-to-Source Voltage (V)
10000 C - Capacitance (pF)
16
VDS = 15 V ID = 75 A
8000
12
6000
8
4000 Coss 2000 Crss 0 6 12 18 24 30
4
0
0 0 50 100 150 200 250 300
VDS - Drain-to-Source Voltage (V)
Qg - Total Gate Charge (nC)
Capacitance Document Number: 71109 S-72688-Rev. D, 24-Dec-07
Gate Charge www.vishay.com 3
SUP/SUB75P03-07
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 C, unless otherwise noted
1.8 VGS = 10 V ID = 30 A I S - Source Current (A) TJ = 150 C
100
1.5 r DS(on) - On-Resistance
1.2 (Normalized)
0.9
10
0.6
0.3
TJ = 25 C
0 - 50
- 25
0
25
50
75
100
125
150
175
1 0 0.2 0.4 0.6 0.8 1.0
TJ - Junction Temperature (C)
VSD - Source-to-Drain Voltage (V)
On-Resistance vs. Junction Temperature
Source-Drain Diode Forward Voltage
1000
45 ID = 250 A
100 I Dav (a)
IAV (A) at TA = 25 C V(BR)DSS (V)
40
10 IAV (A) at TA = 150 C 1
35
30
0.1 0.00001 0.0001 0.001 tin (s) 0.01 0.1 1
25 - 50
- 25
0
25
50
75
100
125
150
175
TJ - Junction Temperature (C)
Avalanche Current vs. Time
Drain Source Breakdown vs. Junction Temperature
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Document Number: 71109 S-72688-Rev. D, 24-Dec-07
SUP/SUB75P03-07
Vishay Siliconix
THERMAL RATINGS
90 1000
75 100 I D - Drain Current (A) I D - Drain Current (A) 60
10 s
100 s Limited by rDS(on)*
45
10
1 ms 10 ms 100 ms DC
30
1
15
TC = 25 C Single Pulse
0 0 25 50 75 100 125 150 175
0.1 0.1 * VGS
1
10
100
TC - Case Temperature (C)
Maximum Avalanche and Drain Current vs. Case Temperature
2 1 Normalized Effective Transient Thermal Impedance
VDS - Drain-to-Source Voltage (V) minimum VGS at which rDS(on) is specified
Safe Operating Area
Duty Cycle = 0.5
0.2 0.1 0.1 0.05 0.02 Single Pulse
0.01
10- 4
10- 3
10- 2
10- 1
1
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?71109.
Document Number: 71109 S-72688-Rev. D, 24-Dec-07
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Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000 Revision: 18-Jul-08
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